AFN1520, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to
provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage
power management, and low in-line power loss are
needed in commercial industrial surface mount
applications.
Features
100V/4.0A,RDS(ON)= 320m@VGS=10V
100V/4.0A,RDS(ON)= 340m@VGS=4.5V
Super high density cell design for extremely low
RDS (ON)
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